3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs
Identifieur interne : 003538 ( Main/Repository ); précédent : 003537; suivant : 0035393D-Monte Carlo study of short channel tri-gate nanowire MOSFETs
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Abstract
As a result of recent trends in processor speed and core temperature, III-V semiconductors have become a tempting replacement for Si in semiconductor logic. However, as device geometries shrink, the advantages of such a switch are put into question. In this paper we present a computational survey of III-V materials in a tri-gate nanowire MOSFET geometry as compared with Si to determine an optimal material choice for this geometry using a 3D semi-classical Monte Carlo simulation tool. We show that InSb and InAs show promise as future materials for next generation switching devices.
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Register</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>The University of Texas at Austin, UT-PRC 10100 Burnet Road, Bldg 160 Mail Code R9900</s1><s2>Austin, TX 78758</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Austin, TX 78758</wicri:noRegion><orgName type="university">Université du Texas à Austin</orgName><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName></affiliation></author><author><name sortKey="Banerjee, S K" uniqKey="Banerjee S">S. K. 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